Method of manufacturing shallow junction field effect transistor
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United States of America Patent
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Mar 7, 1995
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N/A
app pub date -
Dec 1, 1993
filing date -
Dec 1, 1993
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Abstract
Shallow junctions n- and p-channel field effect transistors are formed with a single ion implant into a conformal tungsten silicide layer. Although phosphorous and boron are implanted into the same silicide regions, the phosphorous prevents the boron from outdiffusing.
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