Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
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United States of America Patent
Stats
-
Feb 28, 1995
Grant Date -
N/A
app pub date -
Dec 13, 1993
filing date -
Dec 13, 1993
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a layer of single crystal gallium nitride. The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride, and a second layer of gallium nitride and aluminum nitride adjacent to the first layer. The mole percentage of aluminum nitride in the second layer is substantially different from the mole percentage of aluminum nitride in the first layer. A layer of single crystal gallium nitride is formed upon the second layer of gallium nitride. In preferred embodiments, the buffer further comprises an epitaxial layer of aluminum nitride upon a silicon carbide substrate.
First Claim
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