Method of making a SOI film having a more uniform thickness in a SOI substrate
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United States of America Patent
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Feb 28, 1995
Grant Date -
N/A
app pub date -
Oct 22, 1993
filing date -
Oct 23, 1992
priority date (Note) -
Expired
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Abstract
To provide a method of making a SOI film having a more uniform thickness in a SOI substrate which makes it possible to keep the variance at .+-.0.3 micrometers or less throughout the entire surface of the substrate, even for SOI substrates with a SOI film thickness between 1 micrometer and 10 micrometers. The surface of a SOI substrate is divided into a plurality of sections, then the SOI film thickness is measured for each section Wi (i=1-n) by means of the spectral interference method using an optical fiber cable, and, simultaneously, the SOI film is etched down to a prescribed thickness by a dry etching device, and thus a desired value and a variance (.+-.0.3 micrometers) of the SOI film thickness is obtained.
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