Method of producing silicon single crystal
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United States of America Patent
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Feb 28, 1995
Grant Date -
N/A
app pub date -
Sep 26, 1990
filing date -
Sep 29, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
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