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Abstract

A double diamond mesa vertical field effect transistor includes a diamond layer, a first diamond mesa on a diamond layer, and a second diamond mesa on the first diamond mesa, opposite the diamond layer. A source contact is formed on the second diamond mesa, opposite the first diamond mesa, and a gate is formed on the first diamond mesa opposite the diamond layer. The drain contact may be formed on the diamond layer adjacent the first diamond mesa, or the diamond layer itself may be formed on a nondiamond substrate and a drain contact may be provided on the nondiamond substrate. An integrated array of field effect transistors may be formed, including a plurality of second mesas on the first mesa, with a plurality of gates formed on the first mesa between the second mesas and a source formed on each second mesa, opposite the first mesa. The second mesas may also extend over the multiple gate contacts on the first mesa to form a common source region with a common source contact. The double mesa vertical field transistors may be formed by selective deposition of the first and second mesas on a diamond layer or by etching the first and second mesas in the diamond layer. Selectively epitaxial lateral overgrowth of the second diamond mesas on the first diamond mesa may be used to form a common source contact over multiple gates.

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