Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Feb 7, 1995
Grant Date -
N/A
app pub date -
Oct 22, 1992
filing date -
Oct 23, 1991
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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F T L CO LTD | KAWASAKI-SHI KANAGAWA |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Takagi, Mikio | Kanagawa, JP | 46 | 1268 |
# of filed Patents : 46 Total Citations : 1268 |
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Patent Citation Ranking
- 47 Citation Count
- H01L Class
- 89.79 % this patent is cited more than
- 30 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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