Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones

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United States of America Patent

PATENT NO 5387557
SERIAL NO

07964609

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Abstract

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A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.

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Patent Owner(s)

Patent OwnerAddress
F T L CO LTDKAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takagi, Mikio Kanagawa, JP 46 1268

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Patent Citation Ranking

  • 47 Citation Count
  • H01L Class
  • 89.79 % this patent is cited more than
  • 30 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1434121091562818107331201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020406080100120140160180200220240260280300320340360

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