Importance

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Abstract

A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide layer forms a substantially chemically non-reactive interface with the polycrystalline diamond. A single layer of substantially stoichiometric proportions of the refractory metal layer is provided in one embodiment of the rectifying contact. Another embodiment includes a second metal-rich refractory metal carbide layer on the stoichiometric layer. Yet another embodiment includes a carbon-rich refractory metal layer between the stoichiometric layer and the polycrystalline diamond layer. A metal field effect transistor including the rectifying contact may also be fabricated. A method for making the rectifying contact includes depositing a layer, or layers, of the refractory metal carbide on the polycrystalline diamond, as contrasted with a solid state reaction to form the refractory metal carbide. Another method includes depositing the polycrystalline diamond on a refractory metal carbide layer.

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First Claim