Stage having electrostatic chuck and plasma processing apparatus using same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5382311
SERIAL NO

08168367

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arai, Izumi Yokohama, JP 24 3954
Ishikawa, Kenji Sagamihara, JP 69 2552
Iwata, Teruo Nirasaki, JP 29 1917
Komino, Mitsuaki Tokyo, JP 31 3733
Mitui, Tadashi Yamanashi, JP 1 855
Tahara, Yoshifumi Tokyo, JP 24 2392

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Patent Citation Ranking

  • 855 Citation Count
  • H01L Class
  • 98.49 % this patent is cited more than
  • 30 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1434121091562818107331201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020406080100120140160180200220240260280300320340360

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