Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
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United States of America Patent
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Dec 27, 1994
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N/A
app pub date -
Feb 27, 1992
filing date -
Feb 27, 1992
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Expired
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Abstract
A plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly and precisely polish and smooth a substrate without mechanically contacting the surface. The pressure of a process gas, which disassociates into reactive plasma species in the presence of an applied radio frequency field, is controlled so as to allow the selection of a primarily unidirectional or a primarily omnidirectional polishing and smoothing mechanism.
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