Electrode for use in a plasma assisted chemical etching process
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United States of America Patent
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Dec 13, 1994
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N/A
app pub date -
Jan 28, 1994
filing date -
May 14, 1993
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Abstract
The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77) therebetween such that a gas can flow therethrough. In the preferred embodiment, the inner member (47) and the concentric outer member (45) are both cylindrical in shape, therefore, the gap (77) has an annular configuration. A vertical ducting system is bored within the inner member (47) and directly or indirectly intersects the annular gap (77).
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