Optical apparatus components having spectrally overlapping characteristics for measuring semiconductor layer thickness
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United States of America Patent
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Dec 6, 1994
Grant Date -
N/A
app pub date -
Mar 8, 1993
filing date -
Apr 28, 1992
priority date (Note) -
Expired
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Abstract
An apparatus for measuring the thickness of a semiconductor layer includes a light source emitting light; an interferometer producing modulated interference light by modulating the light from the light source; an optical system including a light transmission member for introducing the modulated interference light into a measurement sample including at least one film on a substrate; a light detecting element for detecting the modulated interference light reflected from the film and producing an output signal in response; an extracting element for extracting a film interference component having a waveform from the output signal; and an element for calculating the thickness of the film from the waveform of the output signal component. The light detecting element includes a plurality of photodetectors having respective photometric wavenumber ranges that overlap. Thereby, a wavenumber range that is the sum of the respective wavenumber ranges of the respective components is obtained and an optical measurement can be realized over a wide wavenumber range that could not be measured with a single photodetector.
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