Amorphous silicon rectifying contact on diamond and method for making same
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United States of America Patent
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Dec 6, 1994
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N/A
app pub date -
Apr 27, 1992
filing date -
Apr 27, 1992
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Abstract
A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
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