Compound semiconductor vapor phase epitaxial device
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United States of America Patent
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Dec 6, 1994
Grant Date -
N/A
app pub date -
Feb 3, 1993
filing date -
Mar 6, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.
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