Semiconductor element manufacturing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 22, 1994
Issued Date -
N/A
app pub date -
Sep 18, 1992
filing date -
Mar 25, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality. According to the present invention, in a semiconductor element manufacturing method comprising a step of applying an excimer laser beam providing a beam spot having a predetermined irradiation area to an amorphous semiconductor layer formed on an insulating substrate to crystallize the amorphous semiconductor layer to obtain a polycrystal semiconductor layer, the beam spot is moved over said amorphous semiconductor layer in a scanning mode while being shifted with a pitch of at most 1 mm, so that all the parts of the semiconductor layer are substantially equal to one another in the energy applied thereto.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully