Method of deposing by molecular beam epitaxy
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United States of America Patent
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Nov 15, 1994
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app pub date -
Sep 17, 1992
filing date -
Sep 17, 1992
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Abstract
A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.
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