Method for producing single crystal superconducting LnA.sub.2 Cu.sub.3 O.sub.7-x films

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United States of America Patent

PATENT NO 5362711
SERIAL NO

08053318

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Abstract

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A process for forming a single crystal superconducting LnA.sub.2 Cu.sub.3 O.sub.7-x film, wherein Ln is at least one rare earth element and A is at least one alkaline earth element, is disclosed, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu onto a heated substrate in a vacuum vessel while blowing an oxygen gas onto the substrate to form an oxygen-containing atmosphere, thereby forming the single crystal superconducting film on the substrate.

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Patent Owner(s)

Patent OwnerAddress
JAPAN ENERGY CORPORATION10-1 TORONOMON 2-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bando, Yoshichika Ohtsu, JP 5 10
Takada, Toshio Kyoto, JP 54 732
Terashima, Takahito Kyoto, JP 5 20

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