Method for the growing of heteroepitaxial layers
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United States of America Patent
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Oct 18, 1994
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N/A
app pub date -
Oct 6, 1992
filing date -
Oct 8, 1991
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Abstract
A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.
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