Monolithic, fully dense silicon carbide material, method of manufacturing and end uses
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United States of America Patent
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Oct 11, 1994
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app pub date -
Sep 3, 1993
filing date -
Mar 11, 1993
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Abstract
A silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of 'dirty' raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as protective projectile-resistant armor.
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