Plasma immersion ion implantation (PI.sup.3) apparatus
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United States of America Patent
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Oct 11, 1994
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app pub date -
May 7, 1993
filing date -
May 7, 1993
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Abstract
Implantation apparatus for cold cathode plasma immersion ion implantation (C.sup.2 PI.sup.3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.
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