Method for manufacturing a semiconductor device
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United States of America Patent
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Oct 4, 1994
Grant Date -
N/A
app pub date -
Feb 15, 1994
filing date -
Feb 17, 1993
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Abstract
A method for manufacturing a semiconductor device, wherein a thin film of tantalum oxide is formed as a dielectric film in a capacitor element, increases capacitance per unit area and reduces a leakage current in the capacitor element of DRAM memory cells. The method includes steps of forming a polysilicon film constituting a lower electrode of the capacitor element, removing a natural oxide film from the surface of the polysilicon film, nitriding the surface of the polysilicon by rapid thermal nitriding (RTN) using lamp-annealing, forming a tantalum oxide film, densifying and nitriding consecutively the tantalum oxide film, and forming an upper capacitor electrode thereon. The capacitor element formed by the method has a large capacitance per unit area Cs=13.8 fF/.mu.m.sup.2.
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