Single crystal ferroelectric barium titanate films
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United States of America Patent
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Sep 27, 1994
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app pub date -
Jun 9, 1993
filing date -
Mar 30, 1989
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Abstract
A ferroelectric thin film consisting of a single crystal of BaTiO.sub.3 which has a perovskite structure is produced by a method comprising evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit them on a substrate in a vacuum deposition vessel while supplying a small amount of an oxygen gas to the reactor.
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