Semiconductor device, process for the production thereof and apparatus for microwave plasma treatment

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United States of America Patent

PATENT NO 5347100
SERIAL NO

07857658

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Abstract

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Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTD A CORPORATION OF JAPAN6 KANDA SURUGADAI 4-CHOME CHIYODA-KU TOKYO
HITACHI ENGINEERING & SERVICES CO LTD A CORPORATION OF JAPAN2-2 SAIWAICHO-3-CHOME HITACHI-SHI IBARAKI-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Takuya Hitachi, JP 83 1052
Kanai, Fumiyuki Hoya, JP 18 260
Koike, Atsuyoshi Kokubunji, JP 35 650
Ohue, Michio Hitachi, JP 17 297
Saito, Katsuaki Hitachi, JP 17 218
Suzuki, Kazuo Hitachi, JP 249 2242

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