Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
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United States of America Patent
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Aug 30, 1994
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N/A
app pub date -
Mar 8, 1993
filing date -
Mar 8, 1993
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Abstract
In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
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