Method of making a shallow junction by using first and second SOG layers
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United States of America Patent
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Aug 23, 1994
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N/A
app pub date -
Oct 23, 1992
filing date -
Oct 23, 1992
priority date (Note) -
Expired
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Abstract
A shallow junction spin on glass (SOG) process which provides shallow junction semiconductor devices without defects and leaky junctions. The process includes spinning first and second SOG layers containing first and second dopants onto a semiconductor substrate and diffusing the dopants into the substrate to form first and second junctions. The diffusion time and temperature are controlled so as to produce junctions having depths less than a predetermined maximum depth. Insulating and metal interconnect layers are deposited on top of the SOG layers. The insulating layer may include boron-phosphorus silicon glass (BPSG).
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