Method for forming a bipolar transistor using doped SOG
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United States of America Patent
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Aug 23, 1994
Grant Date -
N/A
app pub date -
Oct 23, 1992
filing date -
Oct 23, 1992
priority date (Note) -
Expired
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Abstract
A method for forming a bipolar transistor which employs a single drive-in step to form an emitter and a base. A layer of SOG containing a plurality of dopants is spun onto a collector, typically silicon. The dopants are driven into the collector to form the base and emitter. The method employs diffusion instead of implanting to form shallow and abrupt junctions without damage to the crystal lattice of the silicon.
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