Plasma CVD method

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United States of America Patent

PATENT NO 5340621
SERIAL NO

08035672

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Abstract

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A plasma CVD method and the device for generating an arc discharging plasma, together with introducing both a material gas and a reactive gas into a vacuum chamber; coating a substrate with a thin film which contains a material gas component and a reactive gas component, said plasma CVD method comprising the steps of: introducing said material gas into a position between the arc discharging plasma and the substrate; and introducing said reactive gas into a space opposite, relative to the arc discharging plasma, to a side whereinto the material gas is introduced.

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Patent Owner(s)

Patent OwnerAddress
NIPPON SHEET GLASS CO LTDJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsumoto, Minoru Tsukuba, JP 11 131
Ogino, Etsuo Tsukuba, JP 37 581
Tsuno, Toshio Tsukuba, JP 5 113

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