Semiconductor diode
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United States of America Patent
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Jul 12, 1994
Grant Date -
N/A
app pub date -
Apr 9, 1993
filing date -
Apr 9, 1993
priority date (Note) -
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Abstract
The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.
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