Method of fabricating a compound semiconductor device
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United States of America Patent
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Jul 5, 1994
Grant Date -
N/A
app pub date -
Dec 15, 1992
filing date -
Dec 17, 1991
priority date (Note) -
Expired
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Abstract
A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.
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