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United States of America Patent
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May 31, 1994
Grant Date -
N/A
app pub date -
May 21, 1992
filing date -
May 24, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.
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