Magnetoresistance effect element

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United States of America Patent

PATENT NO 5315282
SERIAL NO

07820866

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Abstract

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A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 .ANG., which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.

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Patent Owner(s)

Patent OwnerAddress
NEC CORPORATIONTOKYO
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1006 OAZA KADOMA KADOMA-SHI OSAKA 571-8501
TDK CORPORATIONTOKYO
TOSOH CORPORATIONYAMAGUCHI
TOYO BOSEKI KABUSHIKI KAISHA2-8 DOJIMAHAMA 2-CHOME KITA-KU OSAKA 530-8230
NIPPON STEEL CORPORATIONTOKYO
UBE INDUSTRIES LTDYAMAGUCHI 755-8633
KANEGAFUCHI CHEMICAL INDUSTRY CO LTDOSAKA
SEISAN KAIHATSU KAGAKU KENKYUSHOSAKYO-KU KYOTO-SHI KYOTO-FU 606
NIPPON MINING CO LTDTOKYO 105

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shinjo, Teruya Uji, JP 9 139
Takada, Toshio Kyoto, JP 54 732
Yamamoto, Hidefumi Kobe, JP 20 214

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