Electrically reprogrammable nonvolatile memory device
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United States of America Patent
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May 24, 1994
Grant Date -
N/A
app pub date -
Nov 21, 1991
filing date -
Nov 22, 1990
priority date (Note) -
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Abstract
An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and; at least one gate electrode formed on said amorphous silicon semiconductor layer through an insulation layer or a high resistance layer; whereby the operation of said gate electrode controls the dopant distribution of said amorphous semiconductor layer, thereby varying the electrical conductivity thereof.
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