Method and apparatus for single crystal silicon production
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 24, 1994
Issued Date -
N/A
app pub date -
Mar 23, 1992
filing date -
Mar 4, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferably in dry powdered form to a molten bath of the material that is maintained at a constant shallow depth. For this purpose, a circular baffle is placed within the crucible containing the molten bath of the material, dividing the crucible into an annular feed zone and a central crystal growth zone. A cylindrical boule is withdrawn from the central crystal growth zone. The surrounding walls of the crucible, and graphite cup that supports the crucible, provide a heating and annealing zone in which the boule is continuously annealed as it is withdrawn from the molten pool. Dopants are also introduced into the annular feed zone, either separately or admixed with the polycrystalline material.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- No Patent Citation Ranking to display
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully