Apparatus for the coating of material on a substrate using a microwave or UHF plasma
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United States of America Patent
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May 10, 1994
Grant Date -
N/A
app pub date -
Jun 1, 1992
filing date -
Jun 1, 1992
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Abstract
An improved radiofrequency wave apparatus (10) which provides a relatively large diameter (on the order of magnitude 500 millimeters) plasma (56) for the coating of a material on a surface of a substrate (50) is described. The apparatus has a movable stage (54), which is used to change the position of the substrate with respect to the plasma. The radiofrequency waves are preferably microwaves or UHF waves (2.45 GHz or 915 MHg). The apparatus has a probe (30) which is mounted along the longitudinal axis (A--A) through a sliding short (16). The apparatus operates in the TM mode and is particularly useful for uniformly coating a relatively large surface of the substrate (or a number of smaller surfaces of substrates at the same time) with a material which is formed in the plasma. The apparatus has been used for depositing diamond films on a number of substrates (Si, Si.sub.3 N.sub.4 and the like).
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