Process for fabricating an integrated circuit device by forming a planarized polysilazane layer and oxidizing to form oxide layer
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United States of America Patent
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May 10, 1994
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N/A
app pub date -
Feb 24, 1993
filing date -
Feb 28, 1992
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Abstract
A thick planarization layer of silicon dioxide that is heat resistant is provided by coating a polysilazane layer over a substrate having steps and firing the polysilazane layer in an oxygen-containing atmosphere to convert the polysilazane to silicon dioxide. The temperature of this conversion may be as low as 400.degree. to 450.degree. C. while a higher firing or curing temperature is preferable to obtain a more densified oxide layer.
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