Gas analyzer for determining impurity concentration of highly-purified gas

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United States of America Patent

PATENT NO 5304797
SERIAL NO

08016534

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Abstract

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Ultra-low concentrations of impurities such as water in a highly-purified gas are analyzed by a system having an ion source chamber and a drift chamber. The ion source chamber ionizes one of a sample gas and a carrier gas to produce main component ions, and the other of the sample gas and carrier gas is introduced into the drift chamber. The invention controls the residence time of main component ions in one of the first and second chambers to be shorter than the mean reaction time of main component ions and impurity molecules of the sample gas in the one of the first and second chambers.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDCHIYODA-KU TOKYO
HITACHI TOKYO ELECTRONICS CO LTDOME-SHI TOKYO 198-8532

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasumi, Keiji Iruma, JP 15 77
Irie, Takashi Kokubunji, JP 70 686
Mitsui, Yasuhiro Fuchu, JP 66 1142

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