Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
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United States of America Patent
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Apr 19, 1994
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N/A
app pub date -
Jun 3, 1993
filing date -
Jun 3, 1993
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Expired
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Abstract
A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.
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