Nonvolatile random access memory
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United States of America Patent
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Mar 15, 1994
Grant Date -
N/A
app pub date -
Aug 5, 1992
filing date -
Aug 5, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nonvolatile random access memory is disclosed having a substrate (50) carrying separate magnetically polarizable domains (19) each surrounded by a full write loop member (18) and arranged to penetrate the Hall channel (36) of a dual drain FET (16) with its residual magnetic field. The domains are organized in word rows and bit columns, are each written to by a single full write current through the surrounding loop member and each read by a comparator connected to the FET drains (42, 42'). The memory can be fabricated in a variety of forms (e.g. a planar card).
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