Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products
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United States of America Patent
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Mar 15, 1994
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N/A
app pub date -
Mar 8, 1993
filing date -
Mar 31, 1989
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Abstract
The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling this structure to be made, that includes a modulation of both the composition and the doping, in a direction that is not perpendicular to the surface of the substrate, notably in a lateral way to obtain a planar technology. According to the invention, this thin layer is made by conformal epitaxy, using a crystalline seed in gas phase, between two confinement layers made of a distinct material in such a way that there can be neither nucleation nor deposition of semiconductive material on the surfaces of said confinement layers and wherein the variation of the gaseous mixture of said gas phase is controlled to obtain said modulation of the composition and/or of the doping of said thin film.
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