One-time-programmable EEPROM cell
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United States of America Patent
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Feb 1, 1994
Grant Date -
N/A
app pub date -
Jun 18, 1992
filing date -
Jun 26, 1991
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Abstract
The invention relates to a one-time-programmable read-only memory cell, abbreviated as PROM. According to the prior art, PROM cells are programmed by the deliberate destruction of a component. Since the information is burnt into the memory cell in this way, a PROM cell can only be programmed once. If read-only memory cells are to be electrically programmed and cleared several times, floating gate transistors in particular are used. With the floating gate transistor, the information is stored as a charge on a completely insulated gate electrode. If PROM and EEPROM memory cells are now integrated on a common chip, this requires additional circuitry due to the different voltage requirements of the two different memory cells. In accordance with the invention, a repeatedly electrically programmable read-only memory is connected such that it can only be electrically programmed once.
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