Photolithographic reduction imaging of extended field
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United States of America Patent
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Jan 25, 1994
Grant Date -
N/A
app pub date -
Sep 4, 1992
filing date -
Sep 4, 1992
priority date (Note) -
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Abstract
A mask or reticle for a single large microcircuit device is imaged in portions by an axially centered photolithographic reduction lens having a movable mask stage in addition to a movable wafer stage so that the portions of the complete device are imaged in juxtaposed registry on the wafer. This allows a single microcircuit device larger than the image field of the reduction lens to be imaged in a scanning mode or in a succession of steps forming images at the desired resolution range of 0.1-0.50 .mu.m.
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