RF amplifier providing reduced drive response rise times and fall times
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United States of America Patent
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Jan 25, 1994
Grant Date -
N/A
app pub date -
Nov 17, 1992
filing date -
Nov 17, 1992
priority date (Note) -
Expired
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Abstract
The normally slow rise time of a Class C bipolar transistor grounded base RF power amplifier is greatly enhanced by circuitry external to the amplifier transistor. Current is injected into the base of the transistor for the duration of the rise time, biasing it into Class A operation during this period. Then, after the base current injection, operation reverts to Class C to retain amplifier power efficiency. Finally, the normally slow fall time of the bipolar Class C RF power amplifier is greatly enhanced by reverse-biasing the base-to-emitter junction during the fall time. During this fall time the amplifier is forced into its cutoff region by the applied reverse bias, as stored charge is pulled out of the base-emitter region of the transistor. In this manner, the power efficiency advantage of Class C power amplifiers may be retained, while adding the benefits of sharper output rise and fall times that would not otherwise be achieved.
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