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Abstract

A method for producing a sintered reaction bonded silicon nitride insulator is disclosed. The method comprises mixing powdered silicon having an average particle size not greater than 5 .mu.m with from 3 to 7 percent each of MgO and CeO.sub.2, pressing a shape from the resulting mixture, calcining the shape, grinding the calcined shape to a desired contour, and heating the ground shape in a nitrogen atmosphere at a pressure of about 1 atmosphere absolute. The MgO and CeO.sub.2 serve as sintering aids. Other suitable sintering aids include 2 to 8 percent of Y.sub.2 O.sub.3, 6 percent of Y.sub.2 O.sub.3 and 2 percent of Al.sub.2 O.sub.3, and 2 to 8 percent of MgO, BeO, HfO.sub.2 or Zr.sub.2 O.sub.2. The heating of the ground shape is controlled, until a reaction bonded Si.sub.3 N.sub.4 body is produced in which at least 99 percent of the Si in the initial charge is reacted to Si.sub.3 N.sub.4, so that reaction between nitrogen and the ground shape is substantially complete at any given temperature before the shape is heated above that temperature, and, thereafter, to produce a sufficient amount of a cerium-magnesium silicate glass to produce a Si.sub.3 N.sub.4 body having from 85 to 90 percent of theoretical density.

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First Claim