Semiconductor integrated circuit device
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United States of America Patent
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Dec 21, 1993
Grant Date -
N/A
app pub date -
Nov 6, 1991
filing date -
Nov 20, 1990
priority date (Note) -
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Abstract
The self-refresh operation of one round of a RAM using dynamic memory cells is accomplished on the basis of the periodic pulses which are formed by an oscillating circuit substantially having no temperature dependency, and the self-refresh period is controlled by a timer circuit using a time constant circuit corresponding to the temperature dependency of the data storage in the memory cells. The operating voltage or boosted output voltage is monitored to switch the circuit operation for generating a plurality kinds of boosted voltages rising sequentially two and three times so that the boosted voltage may be a desired voltage. A control voltage to be fed to the gate of a MOSFET connected between the substrate and the earth potential of the circuit is generated by a dummy substrate voltage generator having a leakage current path varying to follow the fluctuations in a supply voltage.
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