Method of manufacturing single-crystal silicon
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United States of America Patent
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Dec 7, 1993
Issued Date -
N/A
app pub date -
Apr 30, 1992
filing date -
Apr 27, 1990
priority date (Note) -
Expired
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Abstract
A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silicon raw material by application of an external heating means and by current applied to the induction coil which electromagnetically heats the silicon thereby forming a pool of molten silicon in the reservoir, actively cooling said induction coil, and drawing up a single crystal silicon rod from the molten silicon in the melt reservoir.
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