Polysilicon thin film semiconductor device containing nitrogen
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United States of America Patent
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Nov 30, 1993
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N/A
app pub date -
Jan 24, 1992
filing date -
Jan 25, 1991
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Abstract
A polysilicon film pattern of a first conductivity type is formed on one main surface of a substrate. A gate electrode is formed on a predetermined region of the pattern with a gate insulating from interposed therebetween. A source region and a drain region, of a second conductivity type are formed in the upper portions of the pattern. These regions are separated by a region of the pattern located under the gate electrode, and are connected to a source electrode and a drain electrode, respectively. The electrodes are electrically insulated from each other by means of an interlayer insulating film The polysilicon film pattern contains nitrogen, whose concentration is, in that particular region of the polysilicon film pattern which extends from half of the thickness thereof to the bottom thereof, set higher than that of nitrogen inevitably contained in a polysilicon film formed by a CVD method, and set so as to restrain the formation of silicon crystal nuclei Further, the pattern is formed by subjecting an amorphous silicon film having the same nitrogen concentration distribution as above, to a solid-phase growth process.
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