Apparatus for improvement of interconnection capacitance
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United States of America Patent
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Nov 16, 1993
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N/A
app pub date -
Nov 27, 1991
filing date -
Aug 9, 1989
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Abstract
A method and apparatus for reducing interconnection capacitance. A lightly doped buried layer is provided in or on a substrate below a field oxide region. The capacitance of an interconnect on the field oxide is significantly reduced by the lightly doped buried layer. When using a p-type substrate, the lightly doped buried layer may, for example, be a lightly doped (10.sup.13 /cm.sup.3) n-type region. Junction capacitance of, for example, a bipolar transistor is also reduced.
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