Method for manufacturing a semiconductor device
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United States of America Patent
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Oct 19, 1993
Issued Date -
N/A
app pub date -
Jul 15, 1991
filing date -
Jul 24, 1990
priority date (Note) -
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Abstract
A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
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