Method for manufacturing ohmic contacts for compound semiconductors
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United States of America Patent
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Oct 5, 1993
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app pub date -
Apr 10, 1992
filing date -
Apr 29, 1991
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Abstract
A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor wherein initially an AuGe layer is formed on the n-type III-V compound semiconductor, with the thickness of the AuGe layer being between 5 and 50 nm and the germanium concentration being less than 1% by weight. An Au layer with a thickness of between 200 and 600 nm is deposited on the AuGe layer. This layer sequence is now either tempered at a temperature of approx. 360.degree.-390.degree. C. for a period between 40 and 180 minutes, or undergoes rapid thermal annealing at a temperature between 430.degree. C. and 480.degree. C. for a period of 5-20 seconds. The metal semiconductor contact manufactured in accordance with the invention is free of inhomogeneities and has predominantly even boundary surfaces. Thanks to the low ohmic contact resistance and the high reflectivity for radiation in the near-infrared and visible wavelength ranges, the contact is particularly suitable as a full-surface rear contact for luminescent semiconductor diodes emitting infrared or visible light.
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