Apparatus for chemical vapor deposition
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United States of America Patent
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Sep 14, 1993
Issued Date -
N/A
app pub date -
Jul 22, 1991
filing date -
Jul 26, 1986
priority date (Note) -
Expired
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Abstract
An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.
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