Microwave plasma processing apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 7, 1993
Grant Date -
N/A
app pub date -
Nov 27, 1991
filing date -
Nov 29, 1990
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a microwave plasma processing apparatus for processing such as thin film formation, etching, sputtering, and plasma oxidation, etc., on a surface of a processing object by utilizing a high density plasma generated by electron cyclotron resonance. A vacuum vessel of the apparatus, in which a microwave transmitted by a microwave guide is utilized for converting gas supplied to the vacuum vessel to plasma for the plasma processing of the processing object placed in the vacuum vessel, is formed in, such manner that the interior space of the vacuum vessel extends beyond the outer periphery of magnetic field generating coils, and the extended portion of the vessel is provided with a gas outlet for connection with an evacuation apparatus to evacuate the interior of the vacuum vessel to a desired vacuum degree. Accordingly, preferable evacuating characteristics can be obtained even in a case when a large amount of the reaction gas is supplied to the vacuum vessel in order to process a large size processing object, because the vacuum vessel in which the processing object is placed can be connected with the evacuation apparatus through a space and the same effect as if the evacuation apparatus is directly connected with the vacuum vessel is realized.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully